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Professor Roger John Reeves

Contact

Department: School of Physical & Chemical Sciences

Email: roger.reeves@canterbury.ac.nz

Direct Dial: +64 3 3695943

Office: Beatrice Tinsley 421

Language: English

About
Research / Creative works
Methods & Equipment

Fields of Research

  • General spectroscopy using lasers to cover ultraviolet, visible and infrared spectral regions
  • Semiconductor thin film growth
  • Laser spectroscopy of ionic crystals
  • Properties and uses of lasers
  • Rare-earth ion spectroscopy
  • Photoluminescence and Raman scattering studies of semiconductors

Researcher Summary

Semiconductor thin film growth and characterisation particularly transparent conducting oxides that have applications in new electronics.  The growth techniques used include molecular beam epitaxy, pulsed laser deposition and Mist-chemical vapour deposition.  Optical characterisation is done with low temperature photoluminescence and photoconductivity.

Subject Area: Disciplines

  • Chemistry: Spectroscopy
  • Engineering and Technology: Materials
  • Physics: Condensed Matter; Nanotechnology

Resources

  • Staff webpage

Research/Scholarly/Creative Works

Chapters
  • Cheung R., Reeves RJ. and Brown SA. (2000) Process-induced defects and optical memory in gallium nitride. In Beke DL; Fisher DJ; Murch GE (Ed.), Defects and Diffusion in Ceramics, Vol. 186-187: Defect and Diffusion Forum: 61-70. Switzerland: Trans Tech Publications.
Journal Articles
  • Dela Cruz Z., Hou C., Martinez-Gazoni RF., Reeves RJ. and Allen MW. (2022) Performance of in situ oxidized platinum/iridium alloy Schottky contacts on (001), (2 ¯ 01), and (010) β -Ga2O3. Applied Physics Letters 120(8) http://dx.doi.org/10.1063/5.0080652.
  • Hayali A., Reeves RJ. and Alkaisi MM. (2022) Influence of FK209 Cobalt Doped Electron Transport Layer in Cesium Based Perovskite Solar Cells. Applied Sciences (Switzerland) 12(18) http://dx.doi.org/10.3390/app12189382.
  • Hayali A., Reeves RJ. and Alkaisi MM. (2022) Wavelength Selective Solar Cells Using Triple Cation Perovskite. Nanomaterials 12(19) http://dx.doi.org/10.3390/nano12193299.
  • Carroll LR., Martinez-Gazoni RF., Gaston N., Reeves RJ., Downard AJ. and Allen MW. (2021) Bidirectional Control of the Band Bending at the (2̅01) and (010) Surfaces of β-Ga2O3 Using Aryldiazonium Ion and Phosphonic Acid Grafting. ACS Applied Electronic Materials 3(12): 5608-5620. http://dx.doi.org/10.1021/acsaelm.1c01064.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2021) Dramatic Improvement in the Rectifying Properties of Pd Schottky Contacts on β-Ga2O3During Their High-Temperature Operation. IEEE Transactions on Electron Devices 68(4): 1791-1797. http://dx.doi.org/10.1109/TED.2021.3060689.
  • Martinez-Gazoni RF., Allen MW. and Reeves RJ. (2021) Persistent Photoconductivity in SnO2Thin Films Grown by Molecular Beam Epitaxy: The Dominant Roles of Water Vapor and Carrier Concentration. Journal of Physical Chemistry C 125(48): 26967-26977. http://dx.doi.org/10.1021/acs.jpcc.1c08394.
  • McNeill AR., Martinez-Gazoni R., Reeves RJ., Allen MW. and Downard AJ. (2021) Electroreduction of Aryldiazonium Ion at the Polar and Non-Polar Faces of ZnO: Characterisation of the Grafted Films and Their Influence on Near-Surface Band Bending. ChemPhysChem 22(13): 1344-1351. http://dx.doi.org/10.1002/cphc.202100240.
  • Onyema CC., Reeves RJ. and Allen MW. (2021) Performance of metal-semiconductor field effect transistors on mist chemical-vapor-deposition grown ZnO channels with intentionally oxidized AgOxSchottky contact gates. Journal of Applied Physics 130(17) http://dx.doi.org/10.1063/5.0069287.
  • York KR., Makin RA., Senabulya N., Mathis JP., Clarke R., Reeves RJ. and Durbin SM. (2021) Growth Parameter Based Control of Cation Disorder in MgSnN2 Thin Films. Journal of Electronic Materials 50(6): 2949-2955. http://dx.doi.org/10.1007/s11664-020-08708-4.
  • Gazoni RM., Carroll L., Scott JI., Astley S., Evans DA., Downard AJ., Reeves RJ. and Allen MW. (2020) Relationship between the hydroxyl termination and band bending at (2¯ 01)β-G a2 O3 surfaces. Physical Review B 102(3) http://dx.doi.org/10.1103/PhysRevB.102.035304.
  • Hou C., York KR., Makin RA., Durbin SM., Gazoni RM., Reeves RJ. and Allen MW. (2020) High temperature (500 °c) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3. Applied Physics Letters 117(20) http://dx.doi.org/10.1063/5.0026345.
  • Makin RA., York K., Durbin SM. and Reeves RJ. (2020) Revisiting semiconductor band gaps through structural motifs: An Ising model perspective. Physical Review B 102(11) http://dx.doi.org/10.1103/PhysRevB.102.115202.
  • Herklotz F., Chaplygin I., Lavrov EV., Neiman A., Reeves RJ. and Allen MW. (2019) Bistability of a hydrogen defect with a vibrational mode at 3326cm-1 in ZnO. Physical Review B 99(11) http://dx.doi.org/10.1103/PhysRevB.99.115203.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) Direct comparison of plain and oxidized metal Schottky contacts on β-Ga 2 O 3. Applied Physics Letters 114(3) http://dx.doi.org/10.1063/1.5079423.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) High-Temperature β-Ga2O3 Schottky Diodes and UVC Photodetectors Using RuOx Contacts. IEEE Electron Device Letters 40(10): 1587-1590. http://dx.doi.org/10.1109/LED.2019.2937494.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) Oxidized Metal Schottky Contacts on (010) β-Ga 2 O 3. IEEE Electron Device Letters 40(2): 337-340. http://dx.doi.org/10.1109/LED.2019.2891304.
  • Hou C., Makin RA., York KR., Durbin SM., Scott JI., Gazoni RM., Reeves RJ. and Allen MW. (2019) High-temperature (350 °c) oxidized iridium Schottky contacts on β -Ga2O3. Applied Physics Letters 114(23) http://dx.doi.org/10.1063/1.5099126.
  • Lynam MF., Ke NJ., Bradley SJ., Nann T., Neiman A., Reeves RJ., Downard AJ., Golovko VB. and Allen MW. (2019) Size-controlled, high optical quality ZnO nanowires grown using colloidal Au nanoparticles and ultra-small cluster catalysts. APL Materials 7(2) http://dx.doi.org/10.1063/1.5054355.
  • Makin RA., York K., Durbin SM., Senabulya N., Mathis J., Clarke R., Feldberg N., Miska P., Jones CM. and Deng Z. (2019) Alloy-Free Band Gap Tuning across the Visible Spectrum. Physical Review Letters 122(25) http://dx.doi.org/10.1103/PhysRevLett.122.256403.
  • Schuurman JC., McNeill AR., Martinez-Gazoni RF., Scott JI., Reeves RJ., Allen MW. and Downard AJ. (2019) The effect of covalently bonded aryl layers on the band bending and electron density of SnO2 surfaces probed by synchrotron X-ray photoelectron spectroscopy. Physical Chemistry Chemical Physics 21(32): 17913-17922. http://dx.doi.org/10.1039/c9cp03040a.
  • Scott JI., Martinez-Gazoni RF., Allen MW. and Reeves RJ. (2019) Optical and electronic properties of high quality Sb-doped SnO2 thin films grown by mist chemical vapor deposition. Journal of Applied Physics 126(13): 135702-135702. http://dx.doi.org/10.1063/1.5116719.
  • Martinez-Gazoni RF., Allen MW. and Reeves RJ. (2018) Conductivity and transparency limits of Sb-doped Sn O2 grown by molecular beam epitaxy. Physical Review B 98(15) http://dx.doi.org/10.1103/PhysRevB.98.155308.
  • McNeill AR., Bell KJ., Hyndman AR., Gazoni RM., Reeves RJ., Downard AJ. and Allen MW. (2018) Synchrotron X-ray Photoelectron Spectroscopy Study of Electronic Changes at the ZnO Surface Following Aryldiazonium Ion Grafting: A Metal-to-Insulator Transition. Journal of Physical Chemistry C 122(24): 12681-12693. http://dx.doi.org/10.1021/acs.jpcc.8b00758.
  • Farrell IL., Hyndman AR., Reeves RJ., Williams GVM. and Granville S. (2017) Growth and characterisation of Ba2FeMoO6 thin films by pulsed laser deposition. Thin Solid Films 625: 24-28. http://dx.doi.org/10.1016/j.tsf.2017.01.058.
  • Heinhold R., Neiman A., Kennedy JV., Markwitz A., Reeves RJ. and Allen MW. (2017) Hydrogen-related excitons and their excited-state transitions in ZnO. Physical Review B 95(5) 054120 http://dx.doi.org/10.1103/PhysRevB.95.054120.
  • Hyland AM., Reeves RJ., Makin RA., Durbin SM. and Allen MW. (2017) Thermal stability of oxidized noble metal Schottky contacts to ZnO. Materials Science in Semiconductor Processing 69: 9-12. http://dx.doi.org/10.1016/j.mssp.2017.01.016.
  • Senanayake PS., Wells JPR., Reid MF., Hughes-Currie RB., Berden G., Reeves RJ. and Meijerink A. (2017) Temporal dynamics of the frequency non-degenerate transient photoluminescence enhancement observed following excitation of inter-configurational f→d transitions in CaF2:Yb2+. Journal of Luminescence 192: 608-615. http://dx.doi.org/10.1016/j.jlumin.2017.07.053.
  • Dang GT., Uchida T., Kawaharamura T., Furuta M., Hyndman AR., Martinez R., Fujita S., Reeves RJ. and Allen MW. (2016) Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2 thin films. Applied Physics Express 9(4) 041101: 4. http://dx.doi.org/10.7567/APEX.9.041101.
  • Hughes-Currie RB., Ivanovskikh KV., Reid MF., Wells JPR., Reeves RJ. and Meijerink A. (2016) Vacuum ultraviolet synchrotron measurements of excitons in NaMgF3:Yb2+. Journal of Luminescence 169(B): 419-421. http://dx.doi.org/10.1016/j.jlumin.2015.03.023.
  • Ivanovskikh KV., Hughes-Currie RB., Reid MF., Wells J-PR., Sokolov NS. and Reeves RJ. (2016) Synchrotron spectroscopy of confined carriers in CdF2-CaF2 superlattices. JOURNAL OF APPLIED PHYSICS 119(10) 104305: 6. http://dx.doi.org/10.1063/1.4943498.
  • McNeill A., Hyndman A., Reeves R., Downard AJ. and Allen M. (2016) Tuning the Band Bending and Controlling the Surface Reactivity at Polar and NonPolar Surfaces of ZnO through Phosphonic Acid Binding. ACS Applied Materials and Interfaces 8 31392: 31392-31402. http://dx.doi.org/10.1021/acsami.6b10309.
  • McNeill AR., Hyndman AR., Reeves RJ., Downard AJ. and Allen MW. (2016) Tuning the Band Bending and Controlling the Surface Reactivity at Polar and Nonpolar Surfaces of ZnO through Phosphonic Acid Binding. ACS Applied Materials and Interfaces 8(45): 31392-31402. http://dx.doi.org/10.1021/acsami.6b10309.
  • Heinhold R., Reeves RJ., Williams GT., Evans DA. and Allen MW. (2015) Mobility of indium on the ZnO(0001) surface. Applied Physics Letters 106(5) 51606: 1-5. http://dx.doi.org/10.1063/1.4906868.
  • Hughes-Currie RB., Salkeld AJ., Ivanovskikh KV., Reid MF., Wells JPR. and Reeves RJ. (2015) Excitons and interconfigurational transitions in CaF2:Yb2+ crystals. Journal of Luminescence 158: 197-202. http://dx.doi.org/10.1016/j.jlumin.2014.09.050.
  • Senanayake PS., Wells JPR., Reid MF., Hughes-Currie RB., Berden G., Reeves RJ. and Meijerink A. (2015) Frequency non-degenerate sequential excitation of the impurity trapped exciton in strontium fluoride crystals doped with ytterbium. Journal of Applied Physics 117(13) 133109: 9. http://dx.doi.org/10.1063/1.4916375.
  • Allen MW., Heinhold R., Miller P., Henseler MJH., Mendelsberg RJ., Durbin SM. and Reeves RJ. (2013) Polarity effects in the optical properties of hydrothermal ZnO. Applied Physics Letters 103 231109: 1-5. http://dx.doi.org/10.1063/1.4837219.
  • Carder DA., Markwitz A., Reeves RJ., Kennedy J. and Fang F. (2013) Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 307: 154-157. http://dx.doi.org/10.1016/j.nimb.2012.12.078.
  • Hughes-Currie RB., Senanayake PS., Wells JPR., Reid MF., Berden G., Reeves RJ. and Meijerink A. (2013) Site-selective transient photoluminescence enhancement of impurity-trapped excitons in NaMgF3:Yb2+. Physical Review B - Condensed Matter and Materials Physics 88(10) 104304: 11. http://dx.doi.org/10.1103/PhysRevB.88.104304.
  • Senanayake P., Wells JPR., Reid MF., Berden G., Meijerink A. and Reeves RJ. (2013) Impurity Trapped Excitons and Electron Traps in CaF2:Yb2+ and SrF2:Yb2+ Probed by Transient Photoluminescence Enhancement. Journal of Luminescence 133: 81-85. http://dx.doi.org/10.1016/j.jlumin.2011.09.043.
  • Senanayake PS., Wells JPR., Reid MF., Berden G., Meijerink A. and Reeves RJ. (2013) Impurity-trapped excitons and electron traps in CaF:Yb2+ and SrF2:Yb2+probed by transient photoluminescence enhancement. Journal of Luminescence 133: 81-85. http://dx.doi.org/10.1016/j.jlumin.2011.09.043.
  • Chai JH., Myers TH., Song YW., Reeves RJ., Linhart WM., Morris RJH., Veal TD., Dowsett MG., McConville CF. and Durbin SM. (2012) MBE growth and characterization of Mn-doped InN. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics 30(2) http://dx.doi.org/10.1116/1.3687903.
  • Chai JH., Song YW., Reeves RJ. and Durbin SM. (2012) Optical and electrical charatersitics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy. Physica Status Solidi A: Applications and Material Science 209(1): 95-99. http://dx.doi.org/10.1002/pssa.201100153.
  • Heinhold R., Kim HS., Schmidt F., von Wenckstern H., Grundmann M., Mendelsberg RJ., Reeves RJ., Durbin SM. and Allen MW. (2012) Optical and defect properties of hydrothermal ZnO with low lithium contamination. Applied Physics Letters 101(6) 62105: 5pp. http://dx.doi.org/10.1063/1.4739515.
  • Natali F., Ludbrook B., Galipaud J., Plank N., Granville S., Preston A., Le Do B., Richter J., Farrell I. and Reeves R. (2012) Epitaxial growth and properties of GdN, EuN and SmN thin films. Physica Status Solidi C: Current Topics in Solid State Physics 9(3-4): 605-608. http://dx.doi.org/10.1002/pssc.201100363.
  • Senanayake PS., Wells JPR., Reid MF., Berden G., Meijerink A. and Reeves RJ. (2012) Electron trap liberation in MgF2 doped with Yb2+ using a two-color excitation experiment. Applied Physics Letters 100(4) 041902: 4. http://dx.doi.org/10.1063/1.3678630.
  • Mendelsberg RJ., Allen MW., Durbin SM. and Reeves RJ. (2011) Photoluminescence and the exciton-phonon coupling in hydrothermally grown ZnO. Physical Review B: Condensed Matter and Materials Physics 83(20): 205202. http://dx.doi.org/10.1103/PhysRevB.83.205202.
  • Murmu PP., Mendelsberg RJ., Kennedy J., Carder DA., Ruck BJ., Markwitz A., Reeves RJ., Malar P. and Osipowicz T. (2011) Structural and photoluminescence properties of Gd implanted ZnO single crystals. Journal of Applied Physics 110(3): 33534. http://dx.doi.org/10.1063/1.3619852.
  • Reid MF., Senanayake PS., Wells JPR., Berden G., Meijerink A., Salkeld AJ., Duan CK. and Reeves RJ. (2011) Transient photoluminescence enhancement as a probe of the structure of impurity-trapped excitons in CaF(2):Yb(2+). Physical Review B: Condensed Matter and Materials Physics 84(11): 113110. http://dx.doi.org/10.1103/PhysRevB.84.113110.
  • Burke RA., Weng XJ., Kuo MW., Song YW., Itsuno AM., Mayer TS., Durbin SM., Reeves RJ. and Redwing JM. (2010) Growth and Characterization of Unintentionally Doped GaSb Nanowires. Journal of Electronic Materials 39(4): 355-364. http://dx.doi.org/10.1007/s11664-010-1140-5.
  • Chai J., Mendelsberg RJ., Reeves RJ., Kennedy J., von Wenckstern H., Schmidt M., Grundmann M., Doyle K., Myers TH. and Durbin SM. (2010) Identification of a Deep Acceptor Level in ZnO Due to Silver Doping. Journal of Electronic Materials 39(5): 577-583. http://dx.doi.org/10.1007/s11664-009-1025-7.
  • Farrell IL., Reeves RJ., Preston ARH., Ludbrook BM., Downes JE., Ruck BJ. and Durbin SM. (2010) Tunable electrical and optical properties of hafnium nitride thin films. Applied Physics Letters 96(7): 71914. http://dx.doi.org/10.1063/1.3327329.
  • Kennedy J., Carder DA., Markwitz A. and Reeves RJ. (2010) Properties of nitrogen implanted and electron beam annealed bulk ZnO. Journal of Applied Physics 107(10): 103518. http://dx.doi.org/10.1063/1.3380592.
  • Allen MW., Mendlesberg RJ., Reeves RJ. and Durbin SM. (2009) Oxidized noble metal Schottky contacts to n-type ZnO. Applied Physics Letters 94(10): 3pp. http://dx.doi.org/10.1063/1.3089871.
  • Blaikie RJ., Lin L. and Reeves RJ. (2009) Plasmon-enhanced optical transmission of nanostructured metallic multilayers. International Journal of Nanotechnology 6(3/4): 222-232. http://dx.doi.org/10.1504/IJNT.2009.022915.
  • Blaikie RJ., Lin L. and Reeves RJ. (2009) Plasmon-enhanced optical transmission of nanostructured metallic multilayers. INTERNATIONAL JOURNAL OF NANOTECHNOLOGY 6(3-4): 222-232.
  • Gastev SV., Choi JK. and Reeves RJ. (2009) Laser spectroscopy of Eu3+ cubic centers in the CaF2 bulk single crystal. Physics of the Solid State 51(1): 44-49. http://dx.doi.org/10.1134/S1063783409010041.
  • Ludbrook BM., Farrell IL., Kuebel M., Ruck BJ., Preston ARH., Trodahl HJ., Ranno L., Reeves RJ. and Durbin SM. (2009) Growth and properties of epitaxial GdN. Journal of Applied Physics 106(6): 63910. http://dx.doi.org/10.1063/1.3211290.
  • Mendelsberg RJ., Kennedy J., Durbin SM. and Reeves RJ. (2009) Unique photoluminescence from ZnO grown by eclipse pulsed laser deposition. Journal of Vacuum Science and Technology B 27(3): 1698-1704. http://dx.doi.org/10.1116/1.3137968.
  • Reeves RJ., Polley C. and Choi JS. (2009) Laser spectroscopy of CaF2:Eu:Sm thin films grown by pulsed laser deposition. Journal of Luminescence 129(12): 1673-1676. http://dx.doi.org/10.1016/j.jlumin.2009.12.022.
  • Stanger J., Tucker N., Wallace A., Larsen N., Staiger M. and Reeves R. (2009) The Effect of Electrode Configuration and Substrate Material on the Mass Deposition Rate of Electrospinning. Journal of Applied Polymer Science 112(3): 1729-1737. http://dx.doi.org/10.1002/app.29663.
  • Mendelsberg RJ., Kennedy J., Durbin SM. and Reeves RJ. (2008) Carbon enhanced blue-violet luminescence in ZnO films grown by pulsed laser deposition. Current Applied Physics 8(3-4): 283-286. http://dx.doi.org/10.1016/j.cap.2007.10.016.
  • Mendelsburg RJ., Kerler M., Durbin SM. and Reeves RJ. (2008) Photoluminescence behavior of ZnO nanorods produced by eclipse PLD from a Zn metal target. Superlattices and Microstructures 43: 594-599. http://dx.doi.org/10.1016/j.spmi.2007.07.015.
  • Reeves RJ., Choi JK., Gastev SV., Krupin AV., Hoffman KR. and Sokolov NS. (2008) Laser spectroscopy of Eu3+ centers in CaF2:Eu-CdF2 superlattices. Journal of Alloys and Compounds 451(1-2): 84-87. http://dx.doi.org/10.1016/j.jallcom.2007.04.179.
  • Swartz CH., Durbin SM., Anderson PA., Carder D., Reeves RJ., Chandril S., Myers TH., Kennedy VJ. and Ahrenkiel SP. (2008) Mg doping in InN and the use of yttrium-stabilised zirconia substrates. Physica Status Solidi (c) 5(2): 508-510. http://dx.doi.org/10.1002/pssc.200777470.
  • Allen MW., Miller P., Reeves RJ. and Durbin SM. (2007) Influence of spontaneous polarization on the electrical and optical properties of bulk, single crystal ZnO. Applied Physics Letters 90(6): 62104. http://dx.doi.org/10.1063/1.2450642.
  • Chernyshev VA., Abrosimov AV., Gastev SV., Krupin AV., Nikiforov AE., Choi JK., Reeves RJ., Suturin SM. and Sokolov NS. (2007) Energy structure of Eu3+ centres in CdF2-CaF2: Eu superlattices on silicon. Journal of Physics. Condensed Matter 19(39): 395023. http://dx.doi.org/10.1088/0953-8984/19/39/395023.
  • Schuler LP., Valanoor N., Miller P., Guy I., Reeves RJ. and Alkaisi MM. (2007) The Effect of Substrate Material and Postannealing on the Photoluminescence and Piezo Properties of DC-Sputtered ZnO. Journal of Electronic Materials 36(4): 507-518. http://dx.doi.org/10.1007/s11664-006-0046-8.
  • von Wenckstern H., Schmidt H., Grundmann M., Allen MW., Miller P., Reeves RJ. and Durbin SM. (2007) Defects in hydrothermally grown bulk ZnO. Applied Physics Letters 91: 22913. http://dx.doi.org/10.1063/1.2757097.
  • Anderson PA., Kendrick CE., Kinsey RJ., Kennedy VJ., Markwitz A., Reeves R. and Durbin SM. (2006) Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy. Smart Materials and Structures 15(1) S87-S91 http://dx.doi.org/10.1088/0964-1726/15/1/014.
  • Anderson PA., Reeves RJ. and Durbin SM. (2006) RF plasma sources for III-nitrides growth: influence of operating conditions and device geometry on active species production and InN film properties. Physica Status Solidi A: Applications and Material Science 203(1): 106-111. http://dx.doi.org/10.1002/pssa.200563502.
  • Anderson PA., Swartz CH., Carder D., Reeves RJ., Durbin SM., Chandril S. and Myers TH. (2006) Buried p-type layers in Mg-doped InN. Applied Physics Letters 89(18): 184104. http://dx.doi.org/10.1063/1.2378489.
  • Chiu WL., Alkaisi MM., Kumaravelu G., Blaikie RJ., Reeves RJ. and Bittar A. (2006) Sub-wavelength Texturing for Solar Cells using Interferometric Lithography. Advances in Science and Technology 51: 115-120.
  • Duan CK., Meijerink A., Reeves RJ. and Reid MF. (2006) The unusual temperature dependence of the Eu2+ fluorescence lifetime in CaF2 crystals. Journal of Alloys and Compounds 408-412: 784-787. http://dx.doi.org/10.1016/j.jallcom.2005.01.077.
  • Henseler MJH., Lee WCT., Miller P., Durbin SM. and Reeves RJ. (2006) Optical and photoelectrical properties of ZnO thin films and the effects of annealing. Journal of Crystal Growth 287(1): 48-53. http://dx.doi.org/10.1016/j.jcrysgro.2005.10.041.
  • Kennedy J., Markwitz A., Li Z., Gao W., Kendrick C., Durbin SM. and Reeves R. (2006) Modification of electrical conductivity in RF magnetron sputtered ZnO films by low-energy hydrogen ion implantation. Current Applied Physics 6(3): 495-498. http://dx.doi.org/10.1016/j.cap.2005.11.046.
  • Lee WCT., Henseler M., Miller P., Swartz CH., Myers TH., Reeves RJ. and Durbin SM. (2006) Effect of Annealing on the Morphology and Optoelectrical Characteristics of ZnO Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy. Journal of Electronic Materials 35(6): 1316-1321.
  • Lee WCT., Miller P., Reeves RJ. and Durbin SM. (2006) Effects of plasma conditions on properties of ZnO films grown by plasma-assisted molecular beam epitaxy. Journal of Vacuum Sciences and Technology B: Microelectronics and Nanometer Structures 24(3): 1514-1518. http://dx.doi.org/10.1116/1.2192540.
  • Lin L., Reeves RJ. and Blaikie RJ. (2006) Surface-plasmon-enhanced light transmission through planar metallic films. Physical Review B: Condensed Matter and Materials Physics 74(15): 155407. http://dx.doi.org/10.1103/PhysRevB.74.155407.
  • Schuler LP., Alkaisi MM., Miller P. and Reeves RJ. (2006) UV sensing using surface acoustic wave device on DC sputtered ZnO monolayer. Microelectronic Engineering 83(4-9): 1403-1406.
  • Anderson PA., Kendrick CE., Kinsey RJ., Asadov A., Gao W., Reeves RJ. and Durbin SM. (2005) (111) and (100) YSZ as substrates for indium nitride growth. physica status solidi (c) 2(7): 2320-2323.
  • Anderson PA., Kinsey RJ., Durbin SM., Markwitz M., Kennedy VJ., Asadov A., Gao W. and Reeves RJ. (2005) Magnetic and optical properties of the InCrN system. Journal of Applied Physics 98(4) 43903: 5pp.
  • Li Z., Gao W. and Reeves RJ. (2005) Zinc oxide films by thermal oxidation of of zinc thin films. Surface and Coating Technology 198: 319-323.
  • Lin L., Blaikie RJ. and Reeves RJ. (2005) Surface-plasmon-enhanced optical transmission through planar metal films. JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS 19(13): 1721-1728.
  • Lin L., Blaikie RJ. and Reeves RJ. (2005) Surface-plasmon-enhanced optical transmission through planar metal films. Journal of Electromagnetic Waves and Applications 19(13): 1721-1728. http://dx.doi.org/10.1163/156939305775696801.
  • Schuler LP., Alkaisi MM., Miller P., Reeves RJ. and Markwitz A. (2005) Comparison of DC and RF sputtered zinc oxide films with post annealing and dry etching on crystal composition. Japanese Journal of Applied Physics 44: 7555-7560.
  • Anderson PA., Kendrick CE., Diehl W., Reeves RJ. and Durbin SM. (2004) Structural and optical properties of indium nitride grown by plasma-assisted molecular beam epitaxy. SPIE Proceedings 5277: 90-98.
  • Anderson PA., Kendrick CE., Lee TE., Diehl W., Reeves RJ., Kennedy VJ., Markwitz A., Kinsey RJ. and Durbin SM. (2004) Optical and microstructural characteristics of InN on (0001) sapphire and (001) YSZ by plasma-assisted molecular beam epitaxy. Proceedings of the Materials Research Society 798 Y12.3.1-6.
  • Christie VA., Liem ST., Reeves RJ., Kennedy VJ., Markwitz A. and Durbin SM. (2004) Characterisation of polycrystalline gallium nitride grown by plasma-assisted evaporation. Current Applied Physics 4(2-4): 225-228.
  • Gastev SV., Hoffman KR., Kaveev AK., Reeves RJ. and Sokolov NS. (2004) Laser spectroscopy of epitaxial manganese and zinc fluoride films on silicon. Journal of Crystal Growth 268: 536-542.
  • Hoffman KR., Gastev SV., Kaveev AK., Sokolov NS. and Reeves RJ. (2004) Optically probing the crystalline phases of MnF2 and ZnF2 utilizing Sm3+ defect ions. Journal of Luminescence 108: 25-30.
  • Khan F., Brown SA., Liu A., Gourley S., Christie V., Dickie O. and Reeves RJ. (2004) Photoconductivity spectra from n-doped GaN: evidence for two distinct types of donors. Solid-State Electronics 48(3): 373-377.
  • Kinsey RJ., Anderson PA., Kendrick CE., Reeves RJ. and Durbin SM. (2004) Characteristics of InN thin films grown using a PAMBE technique. Journal of Crystal Growth 269(1): 167-172.
  • Jamison SP. and Reeves RJ. (2003) Site-selective laser and Zeeman infrared spectroscopy of Dy3+ centers in SrF2 : Dy3+. Physical Review B 67(11) Art. No. 115110.
  • Sokolov NS., Anisimov OV., Banshchikov AG., Gastev SV., Dyroff C., Reeves RJ., Wang X. and Yen WM. (2002) Exciton Luminescence in Rhombic-Structure MnF2 Epitaxial Films. Physics of the Solid State 44(8): 1455-1548.
  • Tascu S., Reeves RJ., Jacquier B., Moretti P., Montereali RM., Piccinini M. and Seassal C. (2002) Optical near field luminescence of colored centers produced in lithium chloride by electron beam lithography. Journal De Physique IV 12(PR5): 301-302.
  • Tascu S., Reeves RJ., Jacquier B., Moretti P., Montereali RM., Picinini M., Somma F. and Seassal C. (2002) Near Field Optical Spectroscopy of Colored Centers Stripes written in Lithium Fluoride by Electron-Beam Lithography. Radiation Effects & Defects in Solids 157(6-12): 691-694.
  • Wells JPR., Dean T. and Reeves RJ. (2002) Site selective spectroscopy of the C3v symmetry centre in Er3+ doped BaF2. Journal of Luminescence 96(2-4): 239-248. http://dx.doi.org/10.1016/S0022-2313(01)00230-7.
  • Prince BJ., Williamson BE. and Reeves RJ. (2001) Aggregation and site-selective spectroscopy of matrix-isolated metallophthalocyanines. Journal of Luminescence 93(4): 293-301.
  • Reeves RJ., Wang X., Yen WM., Anisimov OV., Banshchikov AG., Gastev SV. and Sokolov NS. (2001) Luminescence of magnetic excitons in orthorhombic MnF2 films. Journal of Luminescence 94-95: 207-210.
  • Rong B., Reeves RJ., Brown SA., Alkaisi MM., van der Drift E., Cheung R. and Slouff WG. (2001) A study of reactive ion etching damage effects in GaN. Microelectronic Engineering 57-58: 585-591.
  • Rong B., van der Drift E., Reeves RJ., Sloof WG. and Cheung R. (2001) Inductively coupled plasma etching of GaN and its effect on electrical characteristics. Journal of Vacuum Science & Technology B 19: 2917-2920.
  • Wang XJ., Wells W., Huang SH., Reeves RJ., Dejneka MJ. and Yen WM. (2001) Studies of the Spectroscopic Properties of Pr³+ Doped in LaF3 Nanocrystals/Glass. Journal of Luminescence 94-95: 229-233.
  • Wells JPR. and Reeves RJ. (2001) Polarized Laser Selective Excitation and Zeeman Infrared Absorption of C4v and C3v Symmetry Centers in Eu3+ Doped CaF2, SrF2 and BaF2. Physical Review B 64(3): 5102-5111. http://dx.doi.org/10.1103/PhysRevB.64.035102.
  • Wells JPR. and Reeves RJ. (2001) Polarized laser selective excitation and Zeeman infrared absorption of C4v and C3v symmetry centers in Eu3+-doped CaF2, SrF2, and BaF2 crystals. Phys. Rev. B. 64: 35102.
  • Brown SA., Reeves RJ., Haase CS., Cheung R., Kirchner C. and Kamp M. (2000) Long-period time-dependent luminescence in reactive ion etched GaN. Physica E 7: 958-962.
  • Brown SA., Reeves RJ., Rong B., Cheung R., Seyboth M., Kirchner C. and Kamp M. (2000) Argon plasma etching of gallium nitride: spectroscopic surprises. Nanotechnology 11(4): 263-269.
  • Cheung R., Reeves RJ., Brown SA., van der Drift E. and Kamp M. (2000) Effects of dry processing on the optical properties of GaN. Journal of Applied Physics 88(12): 7110-7114.
  • Jones GD. and Reeves RJ. (2000) Na+, Li+ and cubic centres in rare-earth doped CaF2 and SrF2. Journal of Luminescence 87-89: 1108-1111.
  • Reeves RJ., Brown SA., Haase CS., Rong B., Cheung R., Kirchner C. and Kamp M. (2000) Origin of the yellow luminescence in Gallium Nitride: Importance of metastability and blue luminescence. Springer Proceedings in Physics 87: 1535-1536.
  • Rong B., Cheung R., Gao W., Alkaisi MM. and Reeves RJ. (2000) Effects of reactive ion etching on the electrical characteristics of GaN. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18(6): 3467-3470.
  • Wells JPR. and Reeves RJ. (2000) Polarised laser-selective excitation and Zeeman infra-red absorption of Sm2+ centres in CaF2 and SrF2 crystals. Phys. Rev. B 61(20): 13593.
  • Wells JPR. and Reeves RJ. (2000) Polarized Laser-Selective Excitation and Zeeman Infrared Absorption of Sm3+ Centers in CaF2 and SrF2 Crystals. Physical Review B 61(20): 13593-13608. http://dx.doi.org/10.1103/PhysRevB.61.13593.
  • Brown SA., Reeves RJ., Haase CS., Cheung R., Kirchner C. and Kamp M. (1999) Reactive ion etched gallium nitride: metastable defects and yellow luminescence. Applied Physics Letters 75: 3285-3287.
  • Cheung R., Reeves RJ., Rong B., Brown SA., Fakkeldij EJM., van der Drift E. and Kamp M. (1999) High resolution reactive ion etching of GaN and etch-induced effects. Journal of Vacuum Science & Technology B: Processing, Measurement, and Phenomena 17: 2759.
  • Cheung R., Withanage S., Reeves RJ., Brown SA., Ben-Yaacov I., Kirchner C. and Kamp M. (1999) Reactive ion etch-induced effects on the near-band-edge luminescence in GaN. Applied Physics Letters 74: 3185.
  • Jamison SP., Reeves RJ., Pavlichuk PP. and Jones GD. (1999) Sharp resonance modes of cubic symmetry rare-earth ions in CaF2 type crystals. Journal of Luminescence 83-84: 429-434.
  • Wells JPR., Jones GD. and Reeves RJ. (1999) Zeeman and hyperfine infrared spectra of Pr3+ centers in alkaline earth fluoride crystals. Phys. Rev. B 60: 851-859.
  • Wells JPR., Jones GD. and Reeves RJ. (1999) Zeeman and hyperfine infrared-spectra of Pr3+ centres in alkaline earth fluoride crystals. Physical Review B 60(2): 851-859. http://dx.doi.org/10.1103/PhysRevB.60.851.
  • Wells JPR., Jones GD. and Reeves RJ. (1997) Energy transfer and laser spectroscopy of Eu3+ co-doped CaF2:Sm3+. Journal of Luminescence 72-74: 977-979. http://dx.doi.org/10.1016/S0022-2313(96)00439-5.
  • Reeves RJ., Powell RC., Chang YH., Ford WT. and Zhu W. (1996) Third-order nonlinear optical properties of phthalocyanines in solution and in polystyrene films. Optical Materials 5(1-2): 43-55. http://dx.doi.org/10.1016/0925-3467(95)00048-8.
  • Takada T., Mackenzie JD., Yamane M., Kang K., Peyghambarian N., Reeves RJ., Knobbe ET. and Powell RC. (1996) Preparation and non-linear optical properties of CdS quantum dots in Na2O-B2O3-SiO2 glasses by the sol-gel technique. Journal of Materials Science 31(2): 423-430. http://dx.doi.org/10.1007/BF01139160.
  • Holmstrom SA., Taheri B., Reeves RJ., Powell RC., Sharp EJ. and Neurgoankar RR. (1995) Nonlinear optical responses of strontium barium niobate. Optics Communications 114(5-6): 413-420. http://dx.doi.org/10.1016/0030-4018(94)00629-9.
  • Liu H., Reeves RJ., Powell RC. and Boatner LA. (1995) Effect of KTa1-xNbxO3 crystal orientation on the nonlinear optical response in the picoseconds degenerate-four-wave mixing. Optical Materials 4(6): 691-699. http://dx.doi.org/10.1016/0925-3467(95)00007-0.
  • Ver Steeg KW., Karasik AY., Reeves RJ., Basiev TT. and Powell RC. (1995) Accumulated photon echo in neodymium-doped disordered yttrium fluoride crystals. Physical Review B 51(9): 6085-6088. http://dx.doi.org/10.1103/PhysRevB.51.6085.
  • Wells JPR. and Reeves RJ. (1995) Upconversion fluorescence of Eu3+ doped alkaline earth fluoride crystals. Journal of Luminescence 66-67: 219-223. http://dx.doi.org/10.1016/0022-2313(95)00140-9.
  • Liu H., Jia W., Porter CL. and Reeves RJ. (1994) Excitation migration in Cr-doped fosterite crystals. Journal of Luminescence 58(1-6): 324-327. http://dx.doi.org/10.1016/0022-2313(94)90427-8.
  • Liu H., Reeves RJ., Powell RC. and Boatner LA. (1994) Polarization dependence of the nonlinear optical responses of KTa1-xNbxO3 crystals after picosecond-pulse laser excitation. Physical Review B 49(9): 6323-6326. http://dx.doi.org/10.1103/PhysRevB.49.6323.
  • Orlovskii YV., Reeves RJ., Powell RC., Basiev TT. and Pukhov KK. (1994) Multiple-phonon nonradiative relaxation: Experimental rates in fluoride crystals doped with Er3+ and Nd3+ ions and a theoretical model. Physical Review B 49(6): 3821-3830. http://dx.doi.org/10.1103/PhysRevB.49.3821.
  • Ver Steeg KW., Karasik AY., Reeves RJ. and Basiev TT. (1994) Accumulated photon echo in CaF2-YF3 : Nd3+ crystals. Journal of Luminescence 60-61(C): 742-744. http://dx.doi.org/10.1016/0022-2313(94)90266-6.
  • Foldvari I., Martin JJ., Hunt CA., Powell RC., Reeves RJ. and Holmstrom SA. (1993) Low-temperature photorefractive effects in Bi12GeO20. Optical Materials 2(1): 25-32. http://dx.doi.org/10.1016/0925-3467(93)90041-X.
  • Foldvari I., Martin JJ., Hunt CA., Powell RC., Reeves RJ. and Peter A. (1993) Temperature dependence of the photorefractive effect in undoped Bi 12GeO20. Journal of Applied Physics 74(2): 783-789. http://dx.doi.org/10.1063/1.354866.
  • Földvári I., Taheri B., Reeves RJ. and Powell RC. (1993) Nonlinear absorption of laser light in Bi2TeO5 single crystal. Optics Communications 102(3-4): 245-250. http://dx.doi.org/10.1016/0030-4018(93)90390-Q.
  • Munoz F. A., Reeves RJ., Taheri B., Powell RC., Blackburn DH. and Cranmer DC. (1993) The dependence of laser-induced refractive index changes in glass on the chemical composition. The Journal of Chemical Physics 98(8): 6083-6091. http://dx.doi.org/10.1063/1.464847.
  • Reeves RJ. and MacFarlane RM. (1993) Spectral hole-burning study of magnetic and hyperfine interactions in SrF2:Pr3+:D- and CaF2:Pr3+:D-. Physical Review B 47(1): 158-164. http://dx.doi.org/10.1103/PhysRevB.47.158.
  • Zverev PG., Murray JT., Powell RC., Reeves RJ. and Basiev TT. (1993) Stimulated Raman scattering of picosecond pulses in barium nitrate crystals. Optics Communications 97(1-2): 59-64. http://dx.doi.org/10.1016/0030-4018(93)90617-E.
  • Manson NB., Hasan Z., Fisk PTH., Reeves RJ., Jones GD. and MacFarlane RM. (1992) Superhyperfine structure of F-, H-, D-, and T- charge-compensated Pr3+ centres CaF2 and SrF2 crystals. Journal of Physics: Condensed Matter 4(25): 5591-5598. http://dx.doi.org/10.1088/0953-8984/4/25/012.
  • Reeves RJ. and Macfarlane RM. (1992) Persistent spectral hole burning induced by ion motion in caf_2:Pr3+:D and srf2:Pr3+:D crystals. Journal of the Optical Society of America B: Optical Physics 9(5): 763-767. http://dx.doi.org/10.1364/JOSAB.9.000763.
  • Reeves RJ., Jones GD. and Syme RWG. (1992) Site-selective laser spectroscopy of Pr3+C4v symmetry centers in hydrogenated CaF2:Pr3+ and SrF2:Pr3+ crystals. Physical Review B 46(10): 5939-5958. http://dx.doi.org/10.1103/PhysRevB.46.5939.
  • Jani MG., Reeves RJ., Powell RC., Quarles GJ. and Esterowitz L. (1991) Alexandrite-laser excitation of a Tm:Ho:Y3A15O12 laser. Journal of the Optical Society of America B: Optical Physics 8(4): 741-746. http://dx.doi.org/10.1364/JOSAB.8.000741.
  • Allik TH., Ferry MJ., Reeves RJ., Powell RC., Hovis WW., Caffey DP., Utano RA., Merkle L. and Campana CF. (1990) Crystallography, spectroscopic analysis, and lasing properties of Nd3+: Ba2ZnGe2O7. Journal of the Optical Society of America B: Optical Physics 7(7): 1190-1197. http://dx.doi.org/10.1364/JOSAB.7.001190.
  • Ferry MJ., Kliewer ML., Reeves RJ., Powell RC. and Allik TH. (1990) Site-selection spectroscopy, energy transfer, and laser emission in Nd 3+-doped Ba2MgGe2O7. Journal of Applied Physics 68(12): 6372-6379. http://dx.doi.org/10.1063/1.346884.
  • Reeves RJ., Jani MG., Powell RC. and Mizell GJ. (1990) Photorefractive gratings induced in KNbO3 by picosecond light pulses. Journal of Luminescence 45(1-6): 419-422. http://dx.doi.org/10.1016/0022-2313(90)90210-3.
  • Reeves RJ. and MacFarlane RM. (1989) Measurement of the effect of uniaxial stress on the spectrum of CaF2:Pr3+:D- using spectral hole burning. Physical Review B 39(9): 5771-5774. http://dx.doi.org/10.1103/PhysRevB.39.5771.
  • Reeves RJ., Jones GD. and Syme RWG. (1989) Spectroscopy of reversible-bleaching centers in hydrogenated SrF2:Pr3+ and CaF2:Pr3+ crystals. Physical Review B 40(10): 6475-6484. http://dx.doi.org/10.1103/PhysRevB.40.6475.
  • Cockroft NJ., Han TPJ., Reeves RJ., Jones GD. and Syme RWG. (1987) Reversible polarized bleaching in hydrogenated rare-earth-doped fluorites. Optics Letters 12(1): 36-38. http://dx.doi.org/10.1364/OL.12.000036.
  • Macfarlane RM., Reeves RJ. and Jones GD. (1987) Persistent spectral hole burning due to deuteron tunneling in SrF2:Pr3+:D−. Optics Letters 12(9): 660-662. http://dx.doi.org/10.1364/OL.12.000660.
  • Reeves RJ., Jones GD., Cockroft NJ., Han TPJ. and Syme RWG. (1987) Dynamical processes involving local modes for rare earth centers in CaF2. Journal of Luminescence 38(1-6): 198-200. http://dx.doi.org/10.1016/0022-2313(87)90105-0.
  • Syme RWG., Reeves RJ. and Jones GD. (1984) Laser selective excitation of fluorine and hydrogenic charge compensation sites in SrF2:Pr3+. Journal of Luminescence 31-32(PART 1): 248-250. http://dx.doi.org/10.1016/0022-2313(84)90262-X.
Reports
  • Reeves RJ. (2015) First Affidavit to Federal Court of Australia, case NSD558/2014. In First Affidavit to Federal Court of Australia, case NSD558/2014, Commissioned by Federal Court of Australia. 1-127.
  • Reeves RJ. (2015) Scientific Primer to Federal Court of Australia, case NSD588/2014. In Scientific Primer to Federal Court of Australia, case NSD588/2014, Commissioned by Federal Court of Australia. 1-18.
  • Reeves RJ. (2015) Second Affidavit to Federal Court of Australia, case NSD558/2014. In Second Affidavit to Federal Court of Australia, case NSD558/2014, Commissioned by federal Court of Australia. 1-114.
  • Reeves RJ. (2015) Third Affidavit to Federal Court of Australia, case NSD588/2014. In Third Affidavit to Federal Court of Australia, case NSD588/2014, Commissioned by Federal Court of Australia. 1-30.
  • Cleland A., Reeves R., Dale S., Martin C. and Gourlay S. (2010) FRST Contract Review: C08X0813 HTS Machines, C08X0814 HTS Conductors.Commissioned by Foundation for Research Science and Technology. 19.
Conference Contributions - Published
  • Makin RA., York K., Senabulyay N., Mathisy J., Clarkey R., Feldbergz N., Miska P., Jones CM., Williamsx L. and Kioupakisx E. (2018) Order Parameter and Band Gap of ZnSnN2. In Proceedings IEEE WCPEC/PVSC/PVSEC/EU PVSEC 2018: 3865-3868. http://dx.doi.org/10.1109/PVSC.2018.8548103.
  • Hyndman AR., Allen MW. and Reeves RJ. (2015) Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy. In Proceedings of SPIE: Oxide-based Materials and Devices VI 9364: 1-7. http://dx.doi.org/10.1117/12.2179709.
  • Medina G., Stampe PA., Kennedy RJ., Reeves RJ., Dang GT., Hyland A., Allen MW., Wahila MJ., Piper LFJ. and Durbin SM. (2014) Characterization of Tin Oxide Grown by Molecular Beam Epitaxy. In MRS Proceedings 1633: 13-18. http://dx.doi.org/10.1557/opl.2014.305.
  • Elzwawi S., Kim HS., Heinhold R., Lynam M., Turner G., Partridge JG., McCulloch DG., Reeves RJ. and Allen MW. (2012) Device quality ZnO grown using a Filtered Cathodic Vacuum Arc. In Physica B: Condensed Matter 407(15): 2903-2906. http://dx.doi.org/10.1016/j.physb.2011.08.074.
  • Feldberg N., Keen B., Aldous JD., Scanlon DO., Stampe PA., Kennedy RJ., Reeves RJ., Veal TD. and Durbin SM. (2012) ZnSnN2: A new earth-abundant element semiconductor for solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference: 2524-2527. http://dx.doi.org/10.1109/PVSC.2012.6318108.
  • Yao Y., Aldous JD., Won D., Redwing JM., Linhart W., McConville CF., Reeves RJ., Veal TD. and Durbin SM. (2012) Epitaxial InGaN on nitridated Si(111) for photovoltaic applications. In Conference Record of the IEEE Photovoltaic Specialists Conference: 2617-2620. http://dx.doi.org/10.1109/PVSC.2012.6318131.
  • Partridge JG., Kim D., Heinhold R., Field MR., Durbin SM., Reeves RJ. and Allen MW. (2011) Characterisation and device applications of ZnxMg1-xO films grown by pulsed laser deposition. In IEEE Xplore: 2pp. http://dx.doi.org/10.1109/COMMAD.2010.5699790.
  • Partridge JG., Kim D., Heinhold R., Field MR., Durbin SM., Reeves RJ., Allen MW. and IEEE. (2010) Characterisation and device applications of ZnXMg1-xO films grown by pulsed laser deposition. In PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010): 79-80.
  • Hyndman AR., Williams GVM., Reeves RJ. and McCann DM. (2009) Growth and characterization of cobalt doped titanium dioxide thin films by pulsed laser deposition. In AIP Conference Proceedings 1151: 137-140. http://dx.doi.org/10.1063/1.3203220.
  • Allen MW., Miller P., Chai J., Metson JB., Reeves RJ., Alkaisi MM. and Durbin SM. (2007) Schottky Contact Behaviour as a Function of Metal and ZnO Surface Polarity. In Materials Research Society Symposium Proceedings 957(Zinc Oxide and Related Materials).
  • Allen MW., Miller P., Metson JB., Reeves RJ., Alkaisi MM. and Durbin SM. (2007) Schottky contact behaviour as a function of metal and ZnO surface polarity. In Material Research Society Symposium Proceedings 957: 1-6. http://dx.doi.org/10.1557/PROC-0957-K09-03.
  • Kendrick CE., Tilley R., Kobayashi M., Reeves RJ. and Durbin SM. (2007) Electroluminescence from Single 3D GaN Nanowire Grown by Self-Catalytic Molecular Beam Epitaxy. In Materials Research Society Symposium Proceedings 955E(Advances in III-V Nitride Semiconductor Materials).
  • Swartz CH., Durbin SM., Reeves RJ., Prince K., Kennedy VJ., Chandril S., Myers TH. and Carder D. (2007) Photoluminescence, Capacitance-Voltage, and Variable Field Hall Effect Measurements of Mg-Doped InN. In Materials Research Society Symposium Proceedings 955E(Advances in III-V Nitride Semiconductor Materials).
  • Blaikie R., Lin L. and Reeves R. (2006) Enhanced optical transmission through planar metallic films via excitation of surface plasmons. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN: 458-461. http://dx.doi.org/10.1109/ICONN.2006.340652.
  • Blaikie RJ., Lin L. and Reeves RJ. (2006) Enhanced optical transmission through planar metallic films via excitation of surface plasmons. In Proceedings International Conference on Nanoscience and Nanotechnology 2006: 458-461. http://dx.doi.org/10.1109/ICONN.2006.340652.
  • Durbin SM., Lee WCT., Allen M., Miller P. and Reeves RJ. (2006) Role of active oxygen species on growth of ZnO using RF-PAMB. In Material Research Society Symposium Proceedings 891: 1-6. http://dx.doi.org/10.1557/PROC-0891-EE08-04.
  • Kendrick CE., Carder D., Miller P., Reeves RJ., Tilley R. and Durbin SM. (2006) Nitride and oxide based nanowires grown by plasma-assisted molecular beam epitaxy. In Materials Research Society Symposium Proceedings 940: 35-40. http://dx.doi.org/10.1557/proc-0940-p13-33.
  • Anderson PA., Kinsey RJ., Kendrick CE., Farrell I., Carder D., Reeves RJ. and Durbin SM. (2005) Influence of nitrogen species on InN grown by PAMBE. In Proceedings of the Materials Research Society 892(Symposium FF).
  • Durbin SM., Lee WCT., Miller P. and Reeves RJ. (2005) Role of active oxygen species on growth of ZnO using RF-PAMBE. In Proceedings of the Materials Research Society 891.
  • Anderson PA., Kendrick CE., Kinsey RJ., Williams L., Reeves RJ. and Durbin SM. (2004) Towards Quantifying the Bandgap Energy of Indium Nitride. In Proceedings of COMMAD 2004: 373-376. http://dx.doi.org/10.1109/COMMAD.2004.1577568.
  • Lee WCT., Miller P., Walsby ED., Markwitz A., Kennedy J., Reeves RJ. and Durbin SM. (2004) Characterisation of ZnO Thin Films Grown Directly on Sapphire by PAMBE. In 2004 Conference on Optoelectronic and Microelectronic Materials: 105-108.
  • Reeves R., Jones G., Syme R. and Hoffman K. (2004) Journal of Luminescence: Preface. In Journal of Luminescence 108(1-4) http://dx.doi.org/10.1016/j.jlumin.2004.03.001.
  • Anderson PA., Kendrick CE., Lee TE., Diehl W., Reeves R., Kennedy VJ., Markwitz A., Kinsey RJ. and Durbin SM. (2003) Optical and Microstructural Characterisation of InN Grown by PAMBE on (0001) Sapphire and (001) YSZ. In Proceedings of the Materials Research Society 798(Symposium Y: GaN and Related Alloys).
  • Koo A., Lanke UD., Ruck BJ., Brown SA., Reeves R., Liem I., Bittar A. and Trodahl HJ. (2002) Conductivity, photoconductivity and optical properties of amorphous GaN films. In Materials Research Society Symposium - Proceedings 693: 621-626.
  • Pun A., Durbin SM., Kennedy J., Markwitz A., Reeves R. and Zheng JP. (2002) Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED. In Proceedings of the MRS 749(Symposium W: Morphological and Compositional Evolu).
  • Brown SA., Reeves RJ., Rong B., Cheung R., Seyboth M., Kirchner C. and Kamp M. (2000) Argon plasma etching of gallium nitride: Spectroscopic surprises. In Nanotechnology 11(4): 263-269. http://dx.doi.org/10.1088/0957-4484/11/4/314.
  • Reeves RJ., Dickie O., Rong B., Cheung R. and Brown SA. (2000) Photoluminescence and photoconductivity studies of reactive-ion-etched GaN on SiC Substrates. In Proceedings of International Workshop on Nitride Semiconductors IPAP Conference Series.
  • Jamison SP. and Reeves RJ. (1995) Optical depolarization in CaF2:RE3+ and SrF2:RE3+C4v centers due to dipole reorientation. In Journal of Luminescence 66-67(1-6): 169-173. http://dx.doi.org/10.1016/0022-2313(95)00131-X.
  • Reeves RJ., Murdoch KM. and Jones GD. (1995) Dynamics of bleacheable H-, D- and T- centers in CaF2:Pr3+ and SrF2:Pr3+. In Journal of Luminescence 66-67(1-6): 136-141. http://dx.doi.org/10.1016/0022-2313(95)00125-5.
  • Ver Steeg KW., Reeves RJ., Fedorov VV., Karasik AY., Basiev TT. and Powell RC. (1994) Accumulated photon echo (APE) in ordered and disordered fluoride crystals with Nd3+ ions. In European Quantum Electronics Conference - Technical Digest: 58-59.
  • Ver Steeg KW., Reeves RJ., Fedorov VV., Karasik AY., Basiev TT. and Powell RC. (1994) Picosecond photon-echo spectroscopy in ordered and disordered fluoride crystals doped with Nd3+ ions. In Proceedings of the International Quantum Electronics Conference (IQEC'94): 133.
  • Powell RC., Liu H., Foldvari I., Holmstrom SA. and Reeves RJ. (1993) Nonlinear optical responses of photorefractive crystals. In Proceedings of SPIE - The International Society for Optical Engineering 1861: 238-250. http://dx.doi.org/10.1117/12.147056.
  • Zverev PG., Basiev TT., Murray JT., Powell RC. and Reeves RJ. (1993) Stimulated Raman Scattering of Picosecond Pulses in Ba(NO3)2Crystals. In Optics InfoBase Conference Papers: 156-160.
  • Li CY., Wilson M., Haegel N., Mackenzie JD., Knobbe ET., Porter C. and Reeves R. (1992) CdS-doped ormosils as nonlinear optical materials. In Proceedings of SPIE - The International Society for Optical Engineering 1692: 218-225. http://dx.doi.org/10.1117/12.138064.
  • Powell RC., Taheri B., Munoz AF. and Reeves RJ. (1992) Characteristics of materials for optical limiters and switches. In Proceedings of SPIE - The International Society for Optical Engineering 1692: 25-36. http://dx.doi.org/10.1117/12.138065.
  • Petrin RR., Reeves RJ., Kliewer ML., Powell RC., Aggarwal ID. and Ginther RG. (1990) Laser-Pumped Laser Properties of Nd3+ in Bulk ZBAN Glass. In Optics InfoBase Conference Papers: 236-241.
  • Powell RC., Reeves RJ., Petrovic MS. and Jani MG. (1990) Nonlinear optical interactions in Il-VI semiconductors and displacive ferroelectrics. In Proceedings of SPIE - The International Society for Optical Engineering 1307: 327-335. http://dx.doi.org/10.1117/12.21682.
Oral Presentations
  • Anderson PA., Kendrick CE., Kinsey RJ., Asadov A., Gao W., Reeves RJ. and Durbin SM. (2004) (111) and (100) YSZ as substrates for indium nitride growth. Pittsburg, USA: The International Workshop on Nitride Semiconductors, 23 Aug 2004.
  • Anderson PA., Kendrick CE., Kinsey RJ., Williams L., Reeves RJ. and Durbin SM. (2004) Towards quantifying the bandgap of indium nitride. Brisbane, Australia: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD2004), 05 Oct 2004.
  • Anderson PA., Kinsey RJ., Kendrick CE., Williams L., Reeves RJ. and Durbin SM. (2004) Growth and characterisation of InCrN grown by PAMBE. Pittsburg, USA: The International Workshop on Nitride Semiconductors, 01 Jan 2004.
  • Gastev SV., Choi S., Hoffman KR., Kaveev AK., Reeves RJ. and Sokolov NS. (2004) Luminescence of Sm3+ ions in MnF2 epitaxial films. Ekaterinburg -Zarechniy, Russia: XIIth Feofilov Symposium, 11 Jul 2004.
  • Kinsey RJ., Anderson PA., Kendrick CE., Reeves RJ. and Durbin SM. (2004) Growth of Cubic and Hexagonal InN on Yttrium Stabilised Zirconia by Plasma Assisted Molecular Beam Epitaxy. Pittsburg, USA: The International Workshop on Nitride Semiconductors, 19 Jul 2004.
  • Lee WCT., Walsby ED., Miller P., Blaikie RJ., Kral MV., Reeves RJ. and Durbin SM. (2004) ELO growth of zinc oxide on sapphire using rf-PAMBE. Sendai, Japan: The 3rd International Workshop on ZnO and Related Materials, 19 Jul 2004.
  • Walsby ED., Lee WCT., Miller P., Reeves RJ., Markwitz A., Kennedy J. and Durbin SM. (2004) Characteristics of ZnO thin films grown directly on sapphire by plasma-assisted molecular beam epitaxy. Brisbane, Australia: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD2004), 01 Dec 2004.
  • Anderson PA., Kendrick CE., Lee TE., Diehl W., Reeves R., Kennedy VJ., Markwitz A., Kinsey RJ., Durbin SM. and Anderson PA. (2003) Optical and microstructural characteristics of InN on (0001) sapphire and (001) YSZ by plasma-assisted molecular beam epitaxy. Boston: Fall 2003 Meeting of the Materials Research Society, Y12.3.1-12.3.6, 29 Sep 2003.
  • Christie VA., Liem SI., Reeves R., Kennedy VJ., Markwitz A. and Durbin SM. (2003) Characterisation of polycrystalline gallium nitride grown by plasma-assisted evaporation. Wellington, New Zealand: AMN-1: An International Conference on Advanced Materials and Nanotechnology.
  • Durbin SM. (2003) Characteristics of InN Thin Films Grown Using a PAMBE Technique. Fremantle, Australia: First International Workshop on Indium Nitride.
  • Brown SA., Reeves RJ., Markwitz A., Cheung R., Kirchner C. and Kamp M. (2001) Optical properties of gallium nitride. Wellington, New Zealand: Advanced materials produced and analysed with ion beams.
  • Reeves R., Brown SA. and Cheung R. (2001) Optical Studies of Reactive Ion Etched GaN. Queenstown, New Zealand: Advanced Research Workshop on Semiconductor Nanostructures.
  • Brown SA., Dickie O., Reeves RJ., Rong B., Cheung R., Blaikie R. and Alkaisi M. (2000) Fabrication of a-GaN photodetectors. University of Canterbury, Christchurch, New Zealand: First New Economy Research Fund Workshop on Nanotechnology.
  • Khan F., Brown SA., Liu A., Gourley S., Christie V., Dickie O. and Reeves RJ. (2000) Photoconductivity of Si-Doped GaN: Evidence For Two Distinct Donors. Wellington, New Zealand: Second New Economy Research Fund Workshop on Nanoengineered Materials.
  • Brown SA., Reeves RJ., Cheung R., Ben-Yaacov I., Withanage S., Schauler M. and Kamp M. (1999) Optical Study Of Dry Etched III-Nitride Semiconductors. New South Wales, Australia: 23rd Australian and New Zealand Institute of Physics Condensed Matter Physics Conference.
Conference Contributions - Other
  • Neiman AM., Lynam M., Downard A., Golovko V., Allen M. and Reeves R. (2017) Photoluminesecence of ZnO nanorods grown from gold nanoparticles of 1-20 nm diameter. Queenstown, New Zealand: 8th International Conference on Advanced Materials and Nanotechnology, 12-16 Feb 2017.
  • Reid MF., Wells JPR., Senanayake PS., Hughes-Currie RB., Salkeld AJ., Ivanovskikh KV., Reeves RJ., Berden G. and Meijerink A. (2014) Free-electron laser and synchrotron radiation studies of excitonic states in rare-earth phosphor materials. Dallas, TX, USA: 247th American Chemical Society National Meeting & Exposition (ACS), 16-20 Mar 2014.
  • Reid MF., Hughes-Currie RB., Ivanovskikh K., Senanayake PS., Wells JPR., Reeves RJ., Berden G. and Meijerink A. (2013) Excitonic states in rare-earth phosphor materials probed by free-electron lasers and synchrotron radiation. Nelson, New Zealand: New Zealand Institute of Physics Conference (NZIoP), 27-30 Sep 2013.
  • Salkeld AJ., Hughes-Currie RB., Senanayake PS., Ivanovskikh KV., Reid MF., Wells JPR., Reeves RJ. and Meijerkink A. (2013) Energy levels and dynamics of CaF2:Yb2+ under UV and VUV excitation. Fuzhou, China: 18th International Conference on Dynamical Processes in Excited States of Solids (DPC'13), 4-9 Aug 2013.
  • Wells JPR., Senanayake PS., Hughes-Currie RB., Salkeld AJ., Reid MF., Berden G., Meijerink A., Ivanovskikh K. and Reeves RJ. (2013) Sequential excitation of bound excitons in ytterbium doped fluorided crystals. Fuzhou, China: 18th International Conference on Dynamical Processes in Excited States of Solids (DPC'13), 4-9 Aug 2013.
  • Hughes-Currie RB., Reid MF., Wells JPR., Ivanovskikh K., Senanayake P., Berden G., Meijerink A. and Reeves RJ. (2012) FEL and synchrotron investigation of impurity-trapped excitons in two sites of Yb2+ doped NaMgF3. Belgrade, Serbia: 3rd International Conference on the Physics of Optical Materials and Devices (ICOM), 3-6 Sep 2012.
  • Hughes-Currie RB., Reid MF., Wells JPR., Ivanovskikh K., Senanayake P., Berden G., Meijerink A. and Reeves RJ. (2012) FEL and synchrotron investigation of impurity-trapped excitons in two sites of Yb2+ doped NaMgF3. Udine, Italy: 8th International Conference on f-Elements (ICFE8), 26-31 Aug 2012.
  • Reid MF., Wells JPR., Senanayake P., Hughes-Currie R., Berden G., Meijerink A., Salkeld AJ., Reeves RJ. and Duan CK. (2012) Two-colour excitation of impurity-trapped excitons in fluoride materials doped with Yb2+. Udine, Italy: 8th International Conference on f-Elements (ICFE8), 26-31 Aug 2012.
  • Reid MF., Wells JPR., Senanayake P., Hughes-Currie R., Ivanovskikh KV., Berden G., Meijerink A., Salkeld AJ., Reeves RJ. and Duan CK. (2012) Free-electron laser and synchrotron studies of impurity-trapped excitons in fluoride materials. Belgrade, Serbia: 3rd International Conference on the Physics of Optical Materials and Devices (ICOM), 3-6 Sep 2012.
  • Reid MF., Wells JPR., Senanayake PS., Reeves RJ., Bellocchi G., Meijerink A., Berden G., Redlich B., van der Meer LFG. and Duan CK. (2011) Structure and dynamics of exciton states in lanthanide phosphor materials. Wellington, New Zealand: Fifth International Conference on Advanced Materials and Nanotechnology (AMN5), 7-11 Feb 2011.
  • Reid MF., Wells JPR., Senanayake PS., Salkeld AJ., Reeves RJ., Bellocchi G., Meijerink A., Berden G., Redlich B. and van der Meer LFG. (2011) Structure And Dynamics Of Lanthanide Exciton States Probed By A Free-electron Laser. Ann Arbor, MN, USA: 16th International Conference on Luminescence (ICL'11), 26 Jun-1 Jul 2011.
  • Reid MF., Wells JP., Reeves RJ., Senanayake PS., Reynolds AJ., Meijerink A., Bellocchi G., Berden G., Redlich B. and van der Meer L. (2010) Excited-state structure and dynamics of high-energy states in lanthanide materials. Argonne, IL, USA: 17th International Conference on Dynamical Processes in Excited States of Solids (DPC '10), 20-25 Jun 2010.
  • Reeves RJ., Polley C. and Choi JK. (2008) Laser Spectroscopy of CaF2:Eu:Sm Thin Films Grown by Pulsed Laser Deposition. Lyon, France: 15th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'08), 7-11 Jul 2008.
  • Allen M., Swartz C., Miller P., Reeves R., Metson J., Alkaisi M. and Durbin S. (2007) High quality silver oxide Schottky devices on polar and non polar zinc oxide. Wellington, New Zealand: Third International Conference of Advanced Materials & Nanotechnology (AMN-3), 11-16 Feb 2007.
  • Allen MH., Swartz C., Miller P., Reeves RJ., Chandril S., Myers TH. and Durbin SM. (2007) Influence of surface polarity on the electrical and optical properties of bulk ZnO. Notre Dame, IN, USA: Electronics Materials Conference, 20-20 Jun 2007.
  • Allen MH., Swartz C., Miller P., Reeves RJ., Metson J., Alkaisi MM. and Durbin SM. (2007) High quality silver oxide Schottky devices on polar and nonpolar zinc oxide. Wellington, New Zealand: 3rd International Conference on Advanced Materials and Nanotechnology, 11-11 Feb 2007.
  • Chiu WL., Alkaisi MM., Kumaravelu G., Blaikie RJ., Reeves RJ. and Bitar T. (2007) Sub-wavelength Texturing for Solar Cells using Interferometric Lithography. Wellington, New Zealand: Third International Conference of Advanced Materials & Nanotechnology (AMN-3), 11-16 Feb 2007.
  • Henseler MJH., Lee WCT., Durbin SM. and Reeves RJ. (2007) Dry etching of interference patterned single crystal zinc oxide. Wellington, New Zealand: 3rd International Conference on Advanced Materials and Nanotechnology, 11-11 Feb 2007.
  • Lin L., Blaikie RJ. and Reeves RJ. (2007) Transmission enhancement of planar metal films through resonant coupling of surface plasmons. Wellington, New Zealand: 3rd International Conference on Advanced Materials and Nanotechnology, 11-11 Feb 2007.
  • Miller P., Reeves R., Alkaisi M. and Schuler L. (2007) Effects of substrate and annealing temperature on optical and physical properties of DC sputtered ZnO films. Wellington, New Zealand: Third International Conference of Advanced Materials & Nanotechnology (AMN-3), 11-16 Feb 2007.
  • Myers TH., Swartz C., Kendrick CE., Anderson PA., Lu H., Chandril S., Song Y., Reeves RJ., Durbin SM. and Schaff W. (2007) p-type doping of InN. Las Vegas, NV, USA: 7th International Conference of Nitride Semiconductors, 16-16 Sep 2007.
  • Schuler LP., Miller P., Valanoor N., Markwitz A., Reeves RJ. and Alkaisi MM. (2007) Investigation of piezoelectric domain structures using PFM on DC sputtered ZnO films. Wellington, New Zealand: Third International Conference of Advanced Materials & Nanotechnology (AMN-3), 11-16 Feb 2007.
  • Stanger J., Tucker N., Larsen N., Reeves R. and Staiger MP. (2007) Fundamental Mechanisms Applied to Electrospinning Process Control. Hobart, Australia: 29th Australasian Polymer Symposium (29APS), 11-15 Feb 2007.
  • Stanger JJ., Tucker N., Larsen N., Staiger M. and Reeves R. (2007) Aspects of Electrospinning Process Control from Fundamental Mechanisms. Cincinnati, OH, USA: ANTEC 2007, 6-10 May 2007.
  • Stanger JJ., Tucker N., Larsen N., Staiger MP. and Reeves R. (2007) Polarity and deposition substrate as control parameters for the electrospinning process. University of Warwick, Coventry, UK: International Sustainable Materials, Polymers & Composites Conference and Exploratory Workshop, 11-12 Sep 2007.
  • Stanger JJ., Tucker N., Staiger M., Larsen N. and Reeves R. (2007) The effect of polarity and deposition substrate on the electrospinning process. Beijing, China: Materials Today Asia 2007, 3-5 Sep 2007.
  • Swartz C., Anderson PA., Durbin SM., Reeves RJ., Chandril S., Myers TH., Ahrenkiel S. and Prince K. (2007) Mg doping of InN and the use of Yttrium-Stabilised Zirconia substrates. Strasbourg, France: European Materials Research Society, 28-28 May 2007.
  • Swartz C., Anderson PA., Reeves RJ., Chandril S., Myers TH., Kennedy VJ., Prince K. and Durbin SM. (2007) p-type InN through Mg and transition-metal doping. Wellington, New Zealand: 3rd International Conference on Advanced Materials and Nanotechnology, 11-11 Feb 2007.
  • Swartz C., Durbin SM., Anderson PA., Reeves RJ., Myers TH., Chandril S. and Ahrenkiel S. (2007) Controlling carrier type and concentration in InN through doping and substrate choice. Notre Dame, IN, USA: Electronics Materials Conference, 20-20 Jun 2007.
  • Allen MH., Miller P., Chai J., Metson J., Reeves RJ., Alkaisi MM. and Durbin S. (2006) Schottky Contact Behaviour as a Function of Metal and ZnO Surface Polarity. Boston, MA, USA: Materials Research Society Fall Meeting, 27 Nov-1 Dec 2006.
  • Chernyshev VA., Abrosimov AV., Gastev SV., Nikiforov AE., Reeves RJ. and Sokolov NS. (2006) Energy level calculation of "Interface" Eu3+ center in CaF2:EuCdF2 superlattices. Wroclaw, Poland: 6th International Conference on f-elements (ICFE6), 4-9 Sep 2006.
  • Choi JK. and Reeves RJ. (2006) Eu3+ Centres in MBE grown CaF2:Eu-CdF2 Superlattices. University of Canterbury, Christchurch, New Zealand: The 2006 MacDiarmid Institute Student and Postdoctoral Symposium, 29-30 Nov 2006.
  • Gastev SV., Choi JK., Kaveev AK., Reeves RJ. and Sokolov NS. (2006) Sm3+ ions and Mn2+ exciton energy exchange in MnF2 films on silicon. Wroclaw, Poland: 6th International Conference on f-elements (ICFE6), 4-9 Sep 2006.
  • Henseler MJH. and Reeves RJ. (2006) Magnetic Semiconductors - A New Dimension of Electronics. University of Canterbury, Christchurch, New Zealand: The 2006 MacDiarmid Institute Student and Postdoctoral Symposium, 29-30 Nov 2006.
  • Lin L., Blaikie RJ. and Reeves RJ. (2006) Optical manipulation utilizing plasmonic nanostructures. University of Canterbury, Christchurch, New Zealand: The 2006 MacDiarmid Institute Student and Postdoctoral Symposium, 29-30 Nov 2006.
  • Reeves RJ. (2006) Photorefractive properties of KNbO3. Clearwater Beach, FL, USA: 4th International Photorefractive Workshop, 23-25 Aug 2006.
  • Reeves RJ., Choi JK., Gastev SV., Krupin AV. and Sokolov NS. (2006) Laser spectroscopy of Eu centers in CaF2:Eu-CdF2 superlattices. Wroclaw, Poland: 6th International Conference on f-elements (ICFE6), 4-9 Sep 2006.
  • Anderson PA., Kinsey RJ., Kendrick CE., Williams L., Reeves RJ., Asadov A., Gao W., Kennedy J., Markwitz A. and Durbin SM. (2005) Room temperature ferromagnetism in the In1-xCrxN system: A magnetic and optical study. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Anderson PA., Kinsey RJ., Liu Z., Ringer S., Reeves RJ. and Durbin SM. (2005) Multiple photoluminescence peaks from mixed phase indium nitride thin films. Warsaw, Poland: European Materials Research Society, 6 Sep 2005.
  • Anderson PA., Reeves RJ. and Durbin SM. (2005) RF plasma sources for III-nitride growth: influence of operating conditions and device geometry on active specises production and InN film properties. Warsaw, Poland: European Materials Research Society, 6 Sep 2005.
  • Chiu WL., Alkaisi MM., Blaikie RJ., Reeves RJ. and Drake SJ. (2005) Sub-wavelength texturing for solar cells using interferometric lithography. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Drake SJ., Kohn N., Blaikie RJ., Reeves RJ. and Alkaisi MM. (2005) Photoresist as an Anti-Reflection Coating for Interference Lithography. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Durbin SM., Anderson PA., Kinsey RJ. and Reeves RJ. (2005) Perspectives on the properties of indium nitride. Auckland, New Zealand: International Conference on Advanced Materials Development and Performance 2005, 11 Jul 2005.
  • Durbin SM., Lee WCT., Millane RP., Liu Z., Ringer SP., Bertram F. and Reeves RJ. (2005) Direct formation of nanoporous ZnO networks. Boston, MA, USA: 52nd International AVS Symposium and Exhibition, 30 Oct 2005.
  • Farrell IL., Durbin SM. and Reeves RJ. (2005) Design and function of a Pulsed Laser Deposition facility for growth of novel thin film materials in HV, UHV and plasma environments. Queenstown, New Zealand: AMN-2, 2nd International Conference on Advanced Materials and Nanotechnology, 6 Feb 2005.
  • Farrell IL., Reeves RJ., Anderson PA., Kinsey RJ. and Durbin SM. (2005) Characterisation of a nitrogen source used in a Pulsed Laser Deposition system. London, UK: Micro and Nanotechnology (MNT '05) International Conference, 12 Dec 2005.
  • Gastev SV., Choi JK., Hoffman KR., Kaveev AK., Reeves RJ. and Sokolov NS. (2005) Sm3+ ions as an optical probe in MnF2 epitaxial films. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Gastev SV., Reeves RJ., Choi JK., Hoffman KR., Kaveev AK. and Sokolov NS. (2005) Mn2+ exciton and Sm3+ energy exchange in epitaxial MnF2 films on silicon. Shanghai, China: 15th International Conference on Dynamical Processes in Excited States of Solids, 1 Aug 2005.
  • Henseler MJH., Lee WCT., Miller P., Durbin SM. and Reeves RJ. (2005) Optical and photoelectrical properties of ZnO thin films and effects of annealing. Singapore: 3rd International Conference for Advanced Technologies-ICMAT 2005, 3 Jul 2005.
  • Henseler MJH., Lee WCT., Miller P., Durbin SM. and Reeves RJ. (2005) Optical and photoelectrical properties of ZnO thin films and the effects of annealing. Singapore: 3rd International Conference for Advanced Technologies-ICMAT 2005, 3 Jul 2005.
  • Hoffman KR., Mummy DG., Montejo LD., Reeves RJ., Sokolov NS. and Gastev SV. (2005) Photoluminescence measurements in ultrathin MnF2 films. Beijing, China: 14th International Conference on Luminescence (ICL05), 3 Jul 2005.
  • Kennedy J., Markwitz A., Li Z., Gao W., Durbin SM. and Reeves RJ. (2005) Modification of electrical conductivity in RF sputtered ZnO films and ZnO crystals by low-energy hydrogen implantation. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Kennedy J., Markwitz A., Li Z., Gao W., Durbin SM. and Reeves RJ. (2005) Realisation of p-type doping of ZnO thin films via nitrogen ion implantation. Auckland, New Zealand: International Conference on Advanced Materials Development and Performance, 11 Jul 2005.
  • Kinsey RJ., Anderson PA., Kendrick CE., Williams L., Reeves RJ., Liu Z., Ringer S. and Durbin SM. (2005) Indium Nitride: towards and understanding of the bandgap. Queenstown, New Zealand: AMN-2, 2nd International Conference on Advanced Materials and Nanotechnology, 6 Feb 2005.
  • Kinsey RJ., Anderson PA., Reeves RJ., Durbin SM., Liu Z., Ringer SP., Soldativ AV. and Petravic M. (2005) Nanostructural analysis of indium nitride. Bremen, Germany: 6th International Conference on Nitride Semiconductors, 28 Aug 2005.
  • Lee WCT., Miller P., Myers TH., Reeves RJ. and Durbin SM. (2005) The effect of annealing on the morphology and optoelectrical characteristics of ZnO thin films grown by plasma assisted molecular beam epitaxy. Boston, MA, USA: 2005 U.S. Workshop on the Physics and Chemistry of II-VI Materials, 20 Sep 2005.
  • Lee WCT., Miller P., Myers TH., Reeves RJ. and Durbin SM. (2005) The effect of annealing on the morphology and optoelectrical characteristics of ZnO thin films grown by plasma-assisted molecular beam epitaxy. Boston, MA, USA: 2005 US Workshop on the Physics and Chemistry of II-VI Materials, 20 Sep 2005.
  • Lee WCT., Miller P., Reeves RJ. and Durbin SM. (2005) RF power dependency of ZnO films grown by plasma-assisted molecular beam epitaxy. Santa Barbara, CA, USA: 23rd North American Molecular Beam Epitaxy Conference, 11 Sep 2005.
  • Lee WCT., Walsby ED., Kral M., Miller P., Reeves RJ. and Durbin SM. (2005) Effects of growth templates on ZnO grown by RF-PAMBE. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Lin L., Drake SJ., Reeves RJ. and Blaikie RJ. (2005) Control of the optical transmission of metal films via excitation of surface plasmons. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Miller P., Li Z., Gao W. and Reeves RJ. (2005) Optimising the growth conditions of oxidised zinc films for photoluminescence properties. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Reeves RJ., Gastev SV., Choi JK., Hoffman KR., Krupin AV. and Sokolov NS. (2005) Luminescence of Eu ions in epitaxial fluoride superlattices. Shanghai, China: 15th International Conference on Dynamical Processes in Excited States of Solids, 1 Aug 2005.
  • Reeves RJ., Williams L., Beha K., Anderson P. and Durbin SM. (2005) Photoluminescence and photoconductivity exhibited by PAMBE-grown InN. Singapore: 3rd International Conference for Advanced Technologies-ICMAT 2005, 3 Jul 2005.
  • Reid MF., Duan CK., Reeves RJ. and Meijerink A. (2005) Radiative and non-radiative transitions of Eu2+. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Schuler LP., Alkaisi MM., Miller P. and Reeves RJ. (2005) UV sensing using surface acoustic wave device on DC sputtered ZnO monolayer. Vienna, Austria: International Conference on Micro and Nano-Engineering, 19 Sep 2005.
  • Schuler LP., Alkaisi MM., Miller P. and Reeves RJ. (2005) UV sensing using surface Acoustic Wave devices on DC sputtered ZnO monolayer. Vienna, Austria: 31st International Conference on Micro- and Nano-Engineering (MNE05), 19 Sep 2005.
  • Schuler LP., Alkaisi MM., Miller P., Reeves RJ., Brown SA. and Markwitz A. (2005) Comparison of DC and RF sputtered ZnO thin films. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Williams L., Anderson PA., Kinsey RJ., Durbin SM. and Reeves RJ. (2005) Photoluminescence and photoconductivity exhibited by PAMBE grown InN. Queenstown, New Zealand: 2nd International Conference on Advanced Materials and Nanotechnology (AMN-2), 6 Feb 2005.
  • Anderson PA., Kendrick CE., Kinsey RJ., Asadov A., Gao W., Reeves RJ. and Durbin SM. (2004) (111) and (100) YSZ as substrates for indium nitride growth. Pittsburgh, PA, USA: International Workshop on Nitride Semiconductors, 19 Jul 2004.
  • Duan CK., Meijerink A., Reeves RJ. and Reid MF. (2004) The unusual temperature dependence of the Eu2+ 5d->4f fluorescence lifetime in CaF2 crystals. Nara, Japan: Rare-Earth Conference, 7 Nov 2004.
  • Gastev SV., Choi S., Hoffman KR., Krupin AV., Reeves RJ. and Sokolov NS. (2004) Luminescence of Eu3+ centers in CdF2-CaF2:Eu superlattices studied by laser spectroscopy. St Petersburg, Russia: Nanostructures: Physics and Technology 2004: International Symposium, 21 Jun 2004.
  • Gastev SV., Krupin AV., Hoffman KR., Reeves RJ., Choi S. and Sokolov NS. (2004) Laser spectroscopy of Eu3+ ions in superlattices CdF2 - CaF2: Eu. Nozhii Novgorod, Russia: Workshop Nanophotonica, 2 May 2004.
  • Gastev SV., Reeves RJ., Choi S., Hoffman KR., Krupin AV. and Sokolov NS. (2004) Luminescence of Eu2+ and Eu3+ centers in CaF2:Eu-CdF2 epitaxial superlattices. Ekaterinburg -Zarechniy, Russia: XIIth Feofilov Symposium, 21 Sep 2004.
  • Kendrick CE., Anderson PA., Kinsey RJ., kennedy J., markwitz A., Asadov A., Gao W., Reeves RJ. and Durbin SM. (2004) Polycrystalline InGaN grown by MBE on fused silica glass. Pittsburgh, PA, USA: The International Workshop on Nitride Semiconductors, 19 Jul 2004.
  • Kendrick CE., Anderson PA., Kinsey RJ., Kennedy VJ., Markwitz A., Asadov A., Gao W., Reeves RJ. and Durbin SM. (2004) Polycrystalline InGaN grown by MBE on fused silica glass. Pittsburgh, PA, USA: International Workshop on Nitride Semiconductors, 19 Jul 2004.
  • Li ZW., Gao W. and Reeves RJ. (2004) ZnO Thin Films by Thermal Oxidation of Zn Thin Films. Singapore: Thin Films and Nanotechnology, 13 Jul 2004.
  • Reeves RJ., Gastev SV., Choi S., Hoffman KR., Kaveev AK. and Sokolov NS. (2004) Optical Characterisation of Epitaxial MnF2 Thin Films. Singapore: 1st Nano-Engineering and Nano-Science Congress, 7 Jul 2004.
  • Anderson PA., Kendrick CE., Diehl W., Reeves RJ. and Durbin SM. (2003) Growth behavior of InN by PAMBE on sapphire. Perth, Australia: SPIE's International Symposium on Microelectronics, MEMS, and Nanotechnology, 9 Dec 2003.
  • Anisimov OV., Banshchikov AG., Gastev SV., Kartenko NF., Sokolov NS., Ulin VP., Oga R., Takeda Y., Hoffman KR. and Reeves RJ. (2003) MBE growth and characterisation of MnF2 nano- and microcrystals on CaF2(110) surface. St Petersburg, Russia: Nanostructures: Physics and Technology 2003, International Symposium, 23 Jun 2003.
  • Choi S., Gastev SV., Hoffman KR., Sokolov NS. and Reeves RJ. (2003) Laser spectroscopy of Er3+ ions in magnetic thin films. Christchurch, New Zealand: 14th International Conference on Dynamical Processes in Excited States of Solids (DPC'03), 3 Aug 2003.
  • Duan CK., Meijerink A., Reeves RJ. and Reid MF. (2003) The unusual temperature dependence of the Eu3+ 5d - 4f fluorescence lifetime in CaF2 crystals revisited. Christchurch, New Zealand: 14th International Conference on Dynamical Processes in Excited States of Solids (DPC'03), 3 Aug 2003.
  • Gastev SV., Hoffman KR., Kaveev AK., Reeves RJ. and Sokolov NS. (2003) Laser spectroscopy of epitaxial manganese and zinc fluoride films on silicon. Singapore: International Conference on Materials for Advanced Technologies (ICMAT 2003), 7 Dec 2003.
  • Gastev SV., Hoffman KR., Kaveev AK., Reeves RJ. and Sokolov NS. (2003) Optically probing the distinct crystalline phase of MnF2 and ZnF2 epitaxial layers with Er3+ and Sm3+ defects. Christchurch, New Zealand: 14th International Conference on Dynamical Processes in Excited States of Solids (DPC'03), 3 Aug 2003.
  • Gastev SV., Hoffman KR., Reeves RJ. and Sokolov NS. (2003) Laser spectroscopy of Eu3+ ions in CaF2:Eu-CdF2 superlattices. Christchurch, New Zealand: 14th International Conference on Dynamical Processes in Excited States of Solids (DPC'03), 3 Aug 2003.
  • Gastev SV., Kaveev AK., Reeves RJ. and Sokolov NS. (2003) Photoluminescence of Sm3+ ions in ZnF2 Epitaxial Films on Si. Wellington, New Zealand: Advanced Materials and Nanotechnology Conference, (AMN-1), 9 Feb 2003.
  • Hoffman KR., Reeves RJ., Anisimov OV., Gastev SV., Sokolov NS. and Yen WM. (2003) Laser Excitation Spectra of MnF2 Thin films. Wellington, New Zealand: Advanced Materials and Nanotechnology Conference (AMN-1), 9 Feb 2003.
  • Liem SI. and Reeves RJ. (2003) Influence of ion energy on the reactive-ion-etching and annealing on optical properties of gallium nitride. Christchurch, New Zealand: 14th International Conference on Dynamical Processes in Excited States of Solids (DPC'03), 3 Aug 2003.
  • Liem SI. and Reeves RJ. (2003) Influence of ion energy on the reactive-ion-etching induced optical damage of gallium nitride. Proceedings of the Materials Research Society 764: C3.46.
  • Nelson J. and Reeves RJ. (2003) Spectroscopy of Oh and C2v centres in CaF2:Nd3+. Christchurch, New Zealand: 14th International Conference on Dynamical Processes in Excited States of Solids (DPC'03), 3 Aug 2003.
  • Ruck B., Koo A., Lanke U., Lee H., Bittar A., Markwitz A., Kennedy V., Ariza M., Jones D. and Roziere J. (2002) Optoelectronic and structural properties of amorphous GaN. Wagga Wagga, Australia: 26th Australian and New Zealand Institute of Physics Condensed Matter Physics Conference, 29 Jan 2002.
  • Blaikie RJ., Alkaisi MM., Brown SA., Durbin SM. and Reeves RJ. (2001) Nanotechnology in New Zealand. Ottawa, Canada: APEC CTF Workshop on Nanotechnology, 5 Nov 2001.
  • Gastev SV., Anisimov OV., Banshchikov AG., Sokolov NS., Reeves RJ., Dyroff C., Wang X. and Yen WM. (2001) Exciton luminescence in MnF2 films with orthorhombic structure. Kazan State University: XIth Feofilov symposium on spetroscopy of crystals activated by rare earth and transition metal ions, 24 Sep 2001.
  • Reeves RJ., Brown S. and Cheung R. (2001) Optical studies of reactive-ion-etched GaN. Queenstown, New Zealand: Advanced Research Workshop on Semiconductor Nanostructures (ARW2001), 4 Feb 2001.
  • Rong B., Cheung R., Gao W. and Reeves RJ. (2001) Dry etching of GaN and etch induced damage in an inductively coupled plasma. Washington DC, USA: 45th International Conference on Electron, Ion and Photon Beam Technology, 29 May 2001.
  • Tascu S., Reeves RJ., Jacquier B., Moretti P., Montereali RM., Piccinini M. and Seassal C. (2001) Luminescence en champ proche optique de centres colorés produits dans du Fluorure de Lithium par lithographie électronique. Rennes, France: QOLOC7, 5 Sep 2001.
  • Rong B., Reeves RJ., Brown SA., Alkaisi MM., van der Drift E., Cheung R. and Slouff WG. (2000) A study of photluminescence in GaN/SiC and etching effects on optical properites. Jena, Germany: Int. Conf. on Micro- and Nano-engineering, 18 Sep 2000.
  • Brown SA., Cheung R., Kirchner C. and Kamp M. (1999) Long-period time-dependent luminescence in reactive ion etched GaN. Fukuoka, Japan: 9th International Conference on Modulated Semiconductor Structures (MSS-9), 12 Jul 1999.
  • Prince BJ., Williamson BE. and Reeves RJ. (1998) Selective fluorescence detected MCD and multimode Jahn-Teller coupling in metalloporphyrins. Christchurch, New Zealand: Australian Conference on Optics, Lasers and Spectroscopy, 14 Dec 1998.
  • Reeves RJ. and Dean TR. (1998) Upconversion spectroscopy of K2YF5: Er3+. San Francisco, CA, USA: Conference on Lasers and Electro-Optics (CLEO), 5 May 1998.
Other
  • Reeves RJ. (2011) Physics survives quakes. Physics Today 24(7): 19. Institue of Physics (UK). [Letter to Editor].

Key Methodologies

  • Site-selection spectroscopy
  • Spectral holeburning

Equipment

  • Acton 2150i Spectrograph
  • Ball Miller
  • Boxcar integrator
  • C31034 cooled photomultiplier
  • Cary UV/VIS Spectrophotometer
  • Closed cycle cryostat
  • Closed cycle cryostat
  • Coherent Argon laser
  • Coherent Krypton laser
  • Dye lasers (x3)
  • Excimer laser
  • Helium-Cadmium laser
  • High vacuum systems
  • Hydrogenation Furnace
  • IR viewer
  • Jobin-Yvon 1000M monochromator
  • Large frame Spectra Physics Argon laser
  • Laser power meters (x2)
  • Microstat and optistat optical cryostats
  • Optical choppers (x2)
  • Oriel Lamp
  • Photoelastic modulator
  • Princeton lock-in amplifier
  • Pulsed laser deposition/ Molecular beam epitaxy facility
  • R938 + C31034 cooled photomultipliers and photon counting
  • Sirah pulsed dye laser
  • Spectrafuge 16M
  • Spex 500M single monochromator
  • Spex1403 double monochromator
  • SR430 multichannel scaler
  • SR830 lock in amplifier
  • Struers cutting and polishing equipment
  • Ti-sapphire laser
  • Triax monochromator
  • Yobin-Yvon CCD
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